| 发明名称 |
LASER TREATMENT |
| 摘要 |
PURPOSE:To provide optimum conditions for activating a group IV element film by performing laser annealing. CONSTITUTION:When a film of silicon, etc., formed on an insulation substrate whose crystallinity is damaged by ion irradiation of high energy is activated by pulse laser such as excimer laser, energy density and the number of shots of laser are set to realize log10N<=-0.02 (E--350) if energy N[times]. |
| 申请公布号 |
JPH06124913(A) |
申请公布日期 |
1994.05.06 |
| 申请号 |
JP19930173709 |
申请日期 |
1993.06.21 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;CHIYOU KOUYUU |
| 分类号 |
H01L21/20;B23K26/00;B23K26/06;B23K26/067;B23K101/40;C23C14/58;C23C16/56;G02B13/00;G02B27/09;G02F1/00;G02F1/35;H01L21/00;H01L21/02;H01L21/26;H01L21/265;H01L21/268;H01L21/322;H01L21/324;H01S3/00;H01S3/09;H01S3/097;H01S5/024;(IPC1-7):H01L21/268 |
主分类号 |
H01L21/20 |
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