| 摘要 |
PURPOSE:To provide a semiconductor laser system having excellent light confinement property and resultant light output, etc. CONSTITUTION:Within this semiconductor laser system having the light confinement region comprising the first clad layer 1, a light-guide layer 2, an active layer 3 and the second clad layer 4 formed on a substrate 10 as well as the buried layers 5 provided on both sides of the light confinement region and the conductivity type of the first clad layer 1 and the light-guide layer 2 is the same one as that of the substrate 10 while that of the second clad layer 4 is the other conductivity type, when the refractive indexes of the first clad layer 1, the light-guide layer 2, the active layer 3, the second clad layer 4 and the buried layers 5 are respectively assumed to be n1, n2 n3, n4 and n5, the requirements for the following inequalities are to be satisfied i.e., n3>n1, n3>n4...(1) n3>n2>n1...(2) n1>n5...(3).
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