Integrated semiconductor circuit e.g. DRAM chip - has distance between second output device - with drive rate adjusting element - and potential contact, greater than distance between first device and contact

摘要

The device includes a contact formed on the chip for receiving a predetermined potential. A line is connected to the contact for transmitting the potential. An output device (130a) receives the potential over the line and generates an output signal at the predetermined potential level at a first output node (134) in response to a first data signal. Similarly, a second output device generates an output signal at the predetermined potential level at a second node in response to a second data signal. The distance between the second output device and the contact is greater than the distance between the first output device and the contact. The second output device has an adjustment component for raising the drive rate of the second output node to be the same as for the first output node. ADVANTAGE - Supplies output data with higher rate in stable manner, independent of distance from ground potential contact/current supply contact.