Method of diffusing impurities into sidewalls of semiconductor structures from a doped SOG layer.

摘要

A substrate (12) is processed to form raised portions or pedestals (18-24), having sidewalls (26-38), and trenches. A first layer (14,62) either a doped spin on glass (SOG) layer (62) or undoped oxide (14) layer, may be deposited onto the substrate adjacent the sidewalls. The first layer (14,62) is densified. A second layer (16) may be deposited on the first layer (14,62). The second layer is a doped SOG layer (16). The second layer (16) is densified and the substrate (12) is heated to drive dopant into the sidewalls (26-38).