Semiconductor IC device using ferroelectric material in data storage cells with light assisted state transition

摘要

In a semiconductor memory array, each cell includes a semiconductor switching element and a capacitor with a ferroelectric material layer. The ferroelectric material layer is sandwiched between opposing electrodes and exhibits a polarization varied in response to a voltage applied across the electrodes in such a manner that the direction of polarization is reversed if the voltage reaches a polarization reversal voltage. First electrodes of the capacitor elements are constituted by portions of semiconductor regions of the associated switching elements, while the second electrodes of the capacitor elements of the cells are constituted by a single common conductor layer. A first conductor is connected in common with the second main semiconductor regions of the switching elements of those cells which are on one column. A second conductor is connected in common with control electrodes of the switching elements of those cells which are on one row. An address signal generator is in electrical connection with the first and second conductors and the single common conductor such that a first voltage not lower than the polarization reversal voltage is applied across the electrodes of a capacitor element of a selected cell selected and a second voltage lower than the polarization reversal voltage is applied across the electrodes of a capacitor element of at least one cell which is a not selected.