发明名称 |
Method for fabricating semiconductor device |
摘要 |
A method for fabricating a semiconductor device comprises the steps of depositing a metal film for forming interconnections and/or electrodes on an insulating film formed on a substrate and then applying a hydrostatic pressure exceeding atmospheric pressure to the deposited metal film; or comprises the steps of forming a passivation film on a metal film for forming interconnections and/or electrodes, which is formed on a substrate with an insulating film, and then applying a hydrostatic pressure exceeding atmospheric pressure to the passivation film formed. The method makes it possible to substantially improve density and adhesion of the metal film and the insulating film and to produce semiconductor devices equipped with high-quality electrodes or interconnections at a relatively low cost.
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申请公布号 |
US5308792(A) |
申请公布日期 |
1994.05.03 |
申请号 |
US19920925168 |
申请日期 |
1992.08.06 |
申请人 |
NEC CORPORATION |
发明人 |
OKABAYASHI, HIDEKAZU;ENDO, SHOICHI |
分类号 |
H01L21/3205;H01L21/321;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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