发明名称 |
Semiconductor strained SL APD apparatus |
摘要 |
By making the lattice constant of barrier layers of a superlattice avalanche photodiode lower than the lattice constant of well layers to apply a tensile stress to the barrier layers, a high gain-bandwidth product can be obtained with a high ionization rate ratio kept.
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申请公布号 |
US5308995(A) |
申请公布日期 |
1994.05.03 |
申请号 |
US19920910480 |
申请日期 |
1992.07.08 |
申请人 |
HITACHI, LTD. |
发明人 |
TSUJI, SHINJI;NAKAMURA, HITOSHI |
分类号 |
H01L31/0352;H01L31/107;H04B10/155;(IPC1-7):H01L27/14 |
主分类号 |
H01L31/0352 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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