发明名称 |
Selective sidewall diffusion process using doped SOG |
摘要 |
A selective sidewall diffusion process using doped SOG. A substrate is processed to form raised portions or pedestals, having sidewalls, and trenches. A first layer, either a doped SOG layer or undoped oxide layer, may be deposited onto the substrate adjacent the sidewalls. The first layer is densified. A second layer may be deposited on the first layer. The second layer is a doped SOG layer. The second layer is densified and the dopant is driven into the sidewalls to form shallow junctions.
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申请公布号 |
US5308790(A) |
申请公布日期 |
1994.05.03 |
申请号 |
US19920961967 |
申请日期 |
1992.10.16 |
申请人 |
NCR CORPORATION |
发明人 |
ALLMAN, DERRYL D. J.;MILLER, GAYLE W. |
分类号 |
H01L21/225;H01L21/316;H01L21/334;H01L21/335;(IPC1-7):H01L21/225 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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