发明名称 Test validation method for a semiconductor memory device
摘要 A test validation process for a semiconductor device applies signals indicating a test mode to the semiconductor device. The device produces output signals and the output signals are read to determine whether the device is in the indicated test mode. The test mode is conducted by operating the device. The output signals are read upon completion of the test mode to determine if the device is still in the indicated test mode. The test validation method is useful for memory chips and particularly Dynamic Random Access Memory, DRAM, devices that are burn-in stress tested.
申请公布号 US5309446(A) 申请公布日期 1994.05.03
申请号 US19920927557 申请日期 1992.08.06
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 CLINE, DANNY R.;LOH, WAH K.;HYSLOP, ADIN E.;MCADAMS, HUGH P.;HUNG, CHOK Y.
分类号 G01R31/317;G06F11/00;G11C29/00;G11C29/50;(IPC1-7):G01R31/28 主分类号 G01R31/317
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