| 摘要 |
PURPOSE:To obtain a preferred capacitor insulating film by adopting a ferroelectric substance having a Curie point of -20 deg.C or lower and using it in a paraelectric phase thereby to prevent polarization and reversal. CONSTITUTION:A thin film of a solid solution (XBaZrO3.cl-X) containing BaZrO3 by 45% or more is adopted as a capacitor insulating film. After a ground electrode 15 of pt is formed, With a photoresist as a mask it is patterned by dry etching. On its surface a solid solution thin film 16 is formed by a high-frequency magnetron sputtering process. The thin film composition is X=0.47. Since it has a Curie point of -20 deg.C or lower it is paraelectric in the guaranteed working temperature range (-20 deg.C-150 deg.C) of DRAMs, no polarization and reversal occurs. With this, a sufficient amount of accumulated charge can be acquired by a capacitor with a simple structure and a small area. |
