| 摘要 |
PURPOSE:To realize the high breakdown voltage MISFET having the high breakdown voltage and high current output capable of being mounted on the same substrate for the logic element such as CMOS, etc., at low breakdown voltage comprising a control circuit. CONSTITUTION:The high breakdown voltage MOSFET is composed of a longitudinal type MISFET 25 formed on one side of a laterally extending well layer 2 and a drain part 26 formed on the other side of the same 2 while the second base layer 3 is formed on the surface of the well layer 2. Through these procedures, during the off-time of the MOSFET, the depletion layer extending over the part beneath the MOS part 25 and the second base layer 4 brings about JFET effect to realize the high breakdown voltage while during the on-time of the same, the occurrence of hot carrier can be suppressed by the second base layer 4 thereby enabling the high reliability to be realized. |
