发明名称 |
ACOUSTOELECTRONIC INTEGRATED CIRCUIT AND MANUFACTURE THEREOF |
摘要 |
PURPOSE:To make a high-frequency device such as a voltage controlled oscillator small in size and light in weight and, to facilitate manufacture thereof by a method wherein a single-crystal lithium borate piezoelectric base having a surface acoustic wave element is joined directly to a semiconductor substrate. CONSTITUTION:A single-crystal lithium borate piezoelectric base 2 joined directly onto an Si substrate 1 has a surface acoustic wave element such as a surface acoustic wave resonator on the surface. Each component on the Si substrate 1 and an electrode 6 of the surface acoustic wave resonator are connected by wirings so that they construct a voltage controlled oscillator. The lithium borate base 2 and the Si substrate 1 are joined directly and the voltage controlled oscillator thus integrated in one body is held in a hermetically sealed vessel. Since an oscillation circuit part and the surface acoustic wave resonator are integrated in one body in this way, attainment of miniaturization in a large degree is enabled and the surface acoustic wave resonator is made easily to be about 1/10 in volume and about 1/5 in weight of the one which is closed hermetically in a vessel and fitted discretely. |
申请公布号 |
JPH06120416(A) |
申请公布日期 |
1994.04.28 |
申请号 |
JP19920266158 |
申请日期 |
1992.10.05 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
EDA KAZUO;TAGUCHI YUTAKA;KANAHOSHI AKIHIRO;OGURA TETSUYOSHI |
分类号 |
H01L25/18;H01L25/04;H01L27/00;H01L41/08;H01L41/22;H03B5/30;H03H3/08;H03H9/25 |
主分类号 |
H01L25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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