| 摘要 |
<p>PURPOSE:To obtain a thin film resistor of high resistivity which is mainly composed of tin oxide. CONSTITUTION:Copper is added as impurities in a tin oxide thin film. Also, this tin oxide thin film is heat-treated at the temperature of 580 deg.C. This tin oxide thin film has high resistivity once, but when it is heat-treated, the resistivity is shifted to a high value which is higher than that of the tin oxide thin film when it was formed from the beginning. Moreover, the tin oxide thin film resistor after heat-treatment has stabilized resistivity.</p> |
