| 摘要 |
PURPOSE:To prevent deterioration of electromigration resistance in a metal wiring having a metal nitride layer as an upper layer, and improve reliability, by arranging an Al based alloy film, and a metal layer and a metal nitride layer having low resistance which are formed on the alloy film. CONSTITUTION:An Al based alloy film 13, and a metal layer 14 and a metal nitide layer 15 which are formed on the Al based alloy film 13 are laminated. The metal layer 14 is preferably constituted of metal difficult to be nitrided such as W, Mo, Pt, Pd, Co and Ni, or metal whose resistance becomes low under nitiding such as Ti, Zr, Hf and V. For example, a connection film 12 is formed on a semiconductor substrate 11 having a transistor or the like by CVD, an Al based alloy film 13 of 6000Angstrom in thickness is formed on the film 12 by a sputtering method, and a Ti film 14 of 100Angstrom in thickness and a TiN film 15 of 1000Angstrom in thickness are continuously formed on the film 13, in the same sputtering equipment. Next the film 15 is subjected to photolithography etching and patterned to form a wiring. |
