发明名称 Substrate surface structuring - uses separate masks with partial patterns to expose separate photo sensitive layers to form a complete pattern as an etching mask
摘要 To develop structures of a whole pattern on the substrate surface, at least one initial mask is used with a partial pattern and a second mask with a further partial pattern are used to expose two photo sensitive layers. The overlay of the two partial patterns gives the whole pattern. The interval between neighbouring structures in the two partial patterns is greater than the gap between neighbouring structures in the whole pattern. When the photo layer is exposed through the first mask, one photo layer structure is formed, and another structure is formed at the other layer through the second mask. The two structures together form an etching mask to form the whole pattern on the substrate surface. USE/ADVANTAGE - The substrate surface structure is formed for use in microelectronics or grids especially for surface wave filters or a semiconductor laser. The method gives a finer structure than can be achieved by conventional lithography.
申请公布号 DE4235702(A1) 申请公布日期 1994.04.28
申请号 DE19924235702 申请日期 1992.10.22
申请人 SIEMENS AG, 80333 MUENCHEN, DE 发明人 NOELSCHER, CHRISTOPH, DR., 8000 MUENCHEN, DE
分类号 G03F7/00;G03F7/095;H01L21/027;H01L21/308;(IPC1-7):G03F7/00;G03F7/09;H01L21/312 主分类号 G03F7/00
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