| 摘要 |
<p>PURPOSE:To obtain a tin oxide thin film resistor with a high specific resistance, and to obtain the desired resistivity by adjusting the above-mentioned resistivity. CONSTITUTION:Indium is added as impurities to a tin oxide thin film which is mainly composed of tin oxide. As a result, a tin oxide thin film resistor, having the high resistivity of 10<-2>OMEGAcm or higher, can be obtained. When the concentration of indium, which is the impurity contained in the tin oxide thin film, is changed by the weight ratio against tin element, the resistivity indicated by the logarithmic axis having 10 as the base, changes rectilinearly. As a result, the desired resistivity can be obtained easily by adjusting the resistivity of the tin oxide thin film resistor by changing the concentration of the indium contained in the tin oxide thin film.</p> |
