| 摘要 |
<p>PURPOSE:To obtain a tin oxide thin film resistor with high resistivity, and to obtain the desired resistivity by adjusting the above-mentioned resistivity. CONSTITUTION:Iron is added as impurities to a thin oxide thin film which is mainly composed of tin oxide. As a result, a tin oxide thin film resistor, having high resistivity of 10<-2>OMEGAcm or higher, can be obtained. When the concentration of iron, which is the impurity contained in the tin oxide thin film, is changed by the weight ratio against tin element, the resistivity indicated by the logarithmic axis, having 10 as the base, changes rectininearly. As a result, the intended resistivity can be obtained easily by adjusting the resistivity of the tin oxide thin film resistor by changing the concentration of the above- mentioned iron contained in the tin oxide thin film.</p> |
