发明名称 SYSTEM AND METHOD FOR ACCELERATED DEGRADATION TESTING OF SEMICONDUCTOR DEVICES
摘要 A method of testing a semiconductor device, having the steps of pulsing the semiconductor device with a predetermined level of current for a duration of time so as to cause inadequate parts to degrade and to cause adequate parts to stabilize, and measuring predetermined electrical or optical performance characteristics for the semiconductor device after the current pulse. A system for testing a semiconductor device on a wafer is also provided having a contact probe for applying current pulses to the semiconductor device on the wafer, measuring means electrically connected to the probe for measuring predetermined electrical or optical performance characteristics of the semiconductor device on the wafer, and optical detection means electrically connected to the measuring means for detecting radiation emitted from the semiconductor device on the wafer.
申请公布号 WO9409378(A1) 申请公布日期 1994.04.28
申请号 WO1993US09181 申请日期 1993.09.27
申请人 CREE RESEARCH, INC. 发明人 EDMOND, JOHN, A.;ASBURY, DOUGLAS, A.;CARTER, CALVIN, H., JR.;WALTZ, DOUGLAS, G.
分类号 G01R31/26;H01L21/66 主分类号 G01R31/26
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