| 摘要 |
PURPOSE:To detect a defect by emitting a monochromic X-ray onto a base, and measuring the quantity of photoelectrons emitted from the base being scattered and attenuated by an extremely thin film. CONSTITUTION:The spectral light 3 of a synchrotron emitted light is emitted to a sample 2 installed onto a sample base 1 at an angle of 45 deg., and photoelectrons 4 are generated from the sample 2. These photoelectrons 4 are detected by an electronic energy analyzer 5. The spectral light 3 is emitted to the sample 2 with only the base having no extremely thin film adhered thereon and the sample 2 having the extremely thin film to be evaluated adhered onto the base, and the intensities of the photoelectrons 4 generated from the sample 2 are measured in the same condition. The theoretical calculation value of the intensity of the photoelectrons 4 estimated when the extremely thin film has no defect is compared with the measurement value, whereby the presence of the actual defect of the extremely thin film and its degree are evaluated. |
