| 摘要 |
<p>PURPOSE:To provide the data writing-in and erasing method of the semiconductor non-volatile memory operable in low power supply with high rewiritable frequency by a method wherein the data writing and erasing method requiring of less current and hardly deteriorating a gate oxide film is to be adopted. CONSTITUTION:In the writing-in method of semiconductor nonvolatile memory provided with a floating gate 13 and a control gate 15 as well as a sidewall type select gate 18 through the intermediary of an insulating film 17 on one side furthermore a pair of diffused layers 19, 20 respectively filling the roles of a drain and a source, the control gate 15 is impressed with the potential capable of forming a channel between the pair of diffused layers 19, 20 as well as the sidewall type select gate 18 with the potential capable of blocking the channel formation. In such a constitution, the floating gate 13 is impressed with a charge to perform the data writing-in step without feeding the pair of diffused layers 19, 20 with any current at all.</p> |
