| 摘要 |
<p>PURPOSE:To obviate the defectives due to stepped part in the latter steps by forming porous anode oxide film between gate electrodes of a TFT for eliminating any stepped part. CONSTITUTION:A gate metal 13 is deposited on a glass substrate 1; resist patterns 14 are formed to form gate patterns; an anode oxide film 12 flush with gate electrodes is formed by anode oxidizing the gate metal 13 in an acid solution; next, after the removal of the resist patterns 14, the gate metal 13 is repeatedly anode oxidized in a neutral solution so as to form gate insulating films 4, alpha-Si 5, a semiconductor layer 6, source.drain electrodes 7, 8, a pixel electrode 10 and a signal leading-out electrode 11 into the active matrix substrate.</p> |
