| 摘要 |
<p>PURPOSE:To obtain a simulation method which is capable of calculating with high precision the dynamic characteristic of the gate circuit of the semiconductor device connected with an external circuit, including the factor analysis of vibration. CONSTITUTION:This method is the one simulating the dynamic characteristic of a semiconductor device by coupling the equation of state at the inside of a semiconductor device 1 and the equation of operation of a gate external circuit including a gate inductance 7 eg and a gate resistance 6 rg by defining gate voltage to be the function of time and electric charge in a gate insulating film 5 as parameters. In this method, the equation of operation of an integral type including the time integrated paragraph of the both parameters is used, the initial value of one parameter is designated for every time variations and the other parameter value after time variations is indirectly calculated by the equation of state and the equation of operation, the calculation is repeated, redesignating one parameter so as to correct the difference of the calculated value of the other parameter obtained in these both calculations to a prescribed convergence decision error range by the residual equation obtained by deforming the equation of operation, and subsequently, the calculation is shifted to the calculation for the next time variations.</p> |
