| 摘要 |
<p>PURPOSE:To enhance adhesion without changing the element characteristics of the MIM(metal-insulator-metal structured element by heat treating first and second metals after the formation thereof, then forming an insulating film. CONSTITUTION:Tantalum(Ta) is formed on a transparent substrate 1 having an insulation characteristic, a resist 3 consisting of a positive type photoresist is formed by a coating method and is subjected to exposing development developing. After this resist 3 is patterned, the first metal 2 is etched. Indium tin oxide(ITO) which can be commonly formed as a pixel electrode as well is formed as the second metal 4 and thereafter, the resist 3 is peeled. The second metal 4 is heat treated in order to improve the adhesion between the second metal and the substrate 1 and thereafter, the first metal 2 is subjected to a chemical conversion treatment in a citric acid bath, by which the insulating film 5 consisting of a tantalum oxide film is formed. The thickness of the insulating film 5 obtd. by this chemical conversion treatment is controlled by the impressed voltage and the impression time to bring the insulating film 5 of the side wall of the first metal 2 into contact with the second metal 4.</p> |
