| 摘要 |
PURPOSE:To make it possible to form a quantum fine wire or a quantum box proximately at an interval of a specific dimension. CONSTITUTION:Using an etching mask 4 having a structure in which GaAs layers 2 and AlGaAs layers 3 having a fine wire shape are alternately arranged, a quantum fine wire is formed by etching a machined substrate in which an epitaxial growth of a GaAs layer 6 is performed on an AlGaAs substrate 5. When forming a quantum box, the above method is repeated two times in mutually normal directions. |
