| 摘要 |
PURPOSE:To utilize a surface of a storage electrode of a capacitor for a storage cell sufficiently, by configuring the storage electrode out of a plurality of cylindrical sections, and by connecting the bottom parts of the cylindrical sections with each other. CONSTITUTION:Using a resist patterned in the form of strips as a mask, a first film 24 is patterned in the form of strips by etching an SiO2 film of the first film 24. After peeling the resist, an Si3N4 film of a second film is made to grow over the whole surface of the first film 24. By etching the second film over its whole surface, the second film is left on the sidewalls of the strip- like pattern of the first film 24. By removing the SiO2 film of the first film 24, a film configured out of the frame-like second film is formed. Using this film as a mask, a polysilicon film 23 is etched. Hereupon, in a single storage- electrode-form region, the polysilicon film 23 is etched up to the state wherein the bottom parts of the cylindrical storage electrodes are interconnected sufficiently. |
