| 摘要 |
<p>PURPOSE:To suppress the generation of the dimensional fluctuation by interference of reflected stray light without fluctuating the phase difference of apertures by implanting ions to absorb exposing light into a glass substrate by one time of ion implantation stage, thereby forming the intra-surface distribution of the ions. CONSTITUTION:After a photoresist 96 is applied on the quartz glass substrate 91, the resist is exposed and developed, by which the resist is partly removed. The chromium ions are implanted to the quartz glass substrate 91 after a photolithography stage. After the photoresist 96 is peeled by sulfuric acid, the photoresist 97 is applied over the entire surface of the quartz glass substrate 91 and is exposed and developed, by which the resist is partly removed. The chromium ions are then implanted to the substrate by executing the second ion implantation stage. The photoresist 97 is peeled by the sulfuric acid and a light shielding film 94 is deposited by evaporation. A resist 98 for electron beam exposing is applied and is exposed. The light shielding film 94 is wet etched to form mask patterns. A silicon dioxide film is vapor grown on the quartz glass substrate 91 and the light shielding film 94 and a phase change film 95 is laminated. A resist 9g for electron beams is applied to form coating patterns.</p> |
