发明名称 Thin film circuit manufacturing method - gilding remaining copper surfaces after removal of exposed parts of first relatively thin copper layer
摘要 In the thin film circuit manufacturing method, the entire copper surface (Co1, Co2) is etched away so far in a second etching process, after removal of the photoresist layer, that the exposed part of the first, relatively thin copper layer (Cu1) are completely removed. The remaining copper surfaces are then gilded (Au). Finally these are etched away on the exposed sites by an etching agent which only attacks the titanium layer (Ti). The layers may be deposited by sputtering for the first and second vacuum processes. ADVANTAGE - Edges of conductive tracks are protected by gold layer guaranteeing corrosion protection of tracks.
申请公布号 DE4235919(A1) 申请公布日期 1994.04.28
申请号 DE19924235919 申请日期 1992.10.23
申请人 SIEMENS AG, 80333 MUENCHEN, DE 发明人 JAEGER, ANDREAS, 8017 EBERSBERG, DE
分类号 H01L23/532;H05K1/03;H05K1/16;H05K3/06;H05K3/10;H05K3/24;H05K3/38;(IPC1-7):H01L21/90;H01L27/01;H05K3/16 主分类号 H01L23/532
代理机构 代理人
主权项
地址