发明名称 |
Thin film circuit manufacturing method - gilding remaining copper surfaces after removal of exposed parts of first relatively thin copper layer |
摘要 |
In the thin film circuit manufacturing method, the entire copper surface (Co1, Co2) is etched away so far in a second etching process, after removal of the photoresist layer, that the exposed part of the first, relatively thin copper layer (Cu1) are completely removed. The remaining copper surfaces are then gilded (Au). Finally these are etched away on the exposed sites by an etching agent which only attacks the titanium layer (Ti). The layers may be deposited by sputtering for the first and second vacuum processes. ADVANTAGE - Edges of conductive tracks are protected by gold layer guaranteeing corrosion protection of tracks. |
申请公布号 |
DE4235919(A1) |
申请公布日期 |
1994.04.28 |
申请号 |
DE19924235919 |
申请日期 |
1992.10.23 |
申请人 |
SIEMENS AG, 80333 MUENCHEN, DE |
发明人 |
JAEGER, ANDREAS, 8017 EBERSBERG, DE |
分类号 |
H01L23/532;H05K1/03;H05K1/16;H05K3/06;H05K3/10;H05K3/24;H05K3/38;(IPC1-7):H01L21/90;H01L27/01;H05K3/16 |
主分类号 |
H01L23/532 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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