| 摘要 |
PURPOSE:To prevent a faulty write, by reducing the contact resistance between a capacitor lower electrode and an impurity-injected layer. CONSTITUTION:A semiconductor device formed out of, a P-type monocrystal silicon substrate 20 having a principal surface and having an inclined surface 20a in the predetermined part of the principal surface, n<+> impurity-injected layers 21a, 21b formed at a predetermined space on the principal surface of the monocrystal silicon substrate 20 so as to interpose a channel region 3 between them, a gate electrode 6 formed on the channel region 3 via a gate oxide film 5, and a capacitor lower electrode 24 connected electrically with the n<+> impurity-injected layer 21a on the inclined surface 20a of the monocrystal silicon substrate 20. |
