| 摘要 |
PURPOSE:To provide a method of manufacturing a solar cell, which prevents the generation of surface contamination, reduces ohmic resistance and at the same time, is capable of forming surface ohmic metallic electrodes without destroying the junction of a semiconductor element. CONSTITUTION:In a method of manufacturing a solar cell, a process for forming a p-type GaAs semiconductor layer 12 to form a p-n junction on an n-type GaAs semiconductor substrate 11, a process for forming an antireflection film (an SiO2 film) 13 on the layer 12, a process, for patterning the film 13 by a photolithography and opening parts are formed, a process for forming respectively surface electrodes on the opening parts, a process for selectively growing respectively p<+> high-concentration semiconductor films 14 on the opening parts and a process for forming respectively ohmic metallic electrodes 15 on the films 14 are performed. |
