| 摘要 |
PURPOSE:To obtain dense a-Si:H which has characteristics equal to the a-Si:H obtained by a plasma CVD method and little optical deterioration, by a method wherein the energy density of high frequency power applied to a target is specified, and an amorphous film is formed by using a magnetron RF sputtering method. CONSTITUTION:A specimen is set on a substrate tray 8 for conveying and carried in a sputtering chamber 2, in which the specimen is set together with a main body on an anode 6 provided with a rotary machine. In the case where an a-Si:H film is formed by using the above equipment, a glass substrate is set on a holder, and put in a charge chamber together with the holder. The pressure inside the charge chamber is reduced, and the substrate is sent into a sputtering chamber 2 through a gate valve 3. The temperature of the sputtering chamber 2 is set 50 deg.C or more higher than the film forming temperature, and the inside of the chamber 2 is kept at a vaccum of about 2X10<-5>Pa for several hours. High frequency power of 10W/cm<2> or larger is applied to targets 5. Thereby a-Si:H which is equal to a-Si:H formed by plasma CVD and has little optical deterioration can be obtained. |
