Process for the fabrication of a wafer having a moncrystalline silicium carbide layer.

摘要

To fabricate a large-area wafer, a monocrystalline SiC layer (4) is grown epitaxially on a monocrystalline Si layer (1) provided with a nucleation layer (3) as a result of nucleation. A polycrystalline SiC layer (5) is deposited on the monocrystalline SiC layer (4). The Si layer is then etched away and a wafer is obtained which meets the highest requirements of semiconductor technology and which comprises a composite of a monocrystalline SiC layer (4) and a polycrystalline SiC layer (5).