发明名称 |
Method of making a SOI film having a more uniform thickness in a SOI substrate. |
摘要 |
<p>To provide a method of making a SOI film having a more uniform thickness in a SOI substrate which makes it possible to keep the variance at +/- 0.3 micrometers or less throughout the entire surface of the substrate, even for SOI substrates with a SOI film thickness between 1 micrometer and 10 micrometers. The surface of a SOI substrate is divided into a plurality of sections, then the SOI film thickness is measured for each section Wi (i = 1-n) by means of the spectral interference method using an optical fiber cable, and, simultaneously, the SOI film is etched down to a prescribed thickness by a dry etching device, and thus a desired value and a variance (+/- 0.3 micrometers) of the SOI film thickness is obtained.</p> |
申请公布号 |
EP0594206(A2) |
申请公布日期 |
1994.04.27 |
申请号 |
EP19930117173 |
申请日期 |
1993.10.22 |
申请人 |
SHIN-ETSU HANDOTAI KABUSHIKI KAISHA |
发明人 |
OHTA, YUTAKA;KATAYAMA MASATAKE;MOROGA, ISAO |
分类号 |
H01L21/302;G01B11/06;H01L21/3065;H01L21/66;H01L21/762;H01L27/12;(IPC1-7):H01L21/76;H01L21/306 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|