Negative power supplies for floating gate memories.
摘要
<p>A negative power supply for generating and supplying a regulated negative potential to control gates of selected memory cells via wordlines in an array of flash EEPROM memory cells during flash erasure includes charge pumping means (12) formed of a plurality of charge pump stages (401-404) for generating a high negative voltage, and cancellation means coupled to each stage of the charge pump means for effectively canceling out threshold voltage drops in the charge pump means. A regulator means (16) responsive to the high negative voltage and a reference potential is provided for generating the regulated negative potential so that it is independent of an external supply potential (VCC). <IMAGE></p>
申请公布号
EP0594293(A2)
申请公布日期
1994.04.27
申请号
EP19930307047
申请日期
1993.09.07
申请人
ADVANCED MICRO DEVICES, INC.
发明人
VAN BUSKIRK, MICHAEL A.;CHUNG-LEE CHEN, JOHNNY;CHANG, CHUNG K.;CLEVELAND, LEE E.;MONTALVO, ANTONIO