SPUTTERING METHOD, SPUTTERING DEVICE, VACUUM TREATMENT DEVICE AND THERMOCOUPLE

摘要

PURPOSE:To provide the sputtering method which can uniformly form films by preventing the back flow and diffusion of reactive gases. CONSTITUTION:The pressure P1 in a first film forming chamber 20 is maintained always higher than the pressure P2 in a second film forming chamber 30 by a first automatic pressure controller 28 and second automatic pressure controller 38 of the sputtering device 1. The reactive gases R are injected from an orifice 39 toward the side opposite from a gate part 50. The reactive gases R are discharged from a discharge port 341 provided in the position facing the orifice 39 to each other.