Technique for doping mercury cadmium telluride MOCVD grown crystalline materials using free radical transport of elemental indium and apparatus therefor
摘要
Method and apparatus for vapor phase free methyl radical transport of indium dopant species for precise predetermined reproducible doping concentrations to control electrical properties for MOCVD grown materials.
申请公布号
US5306660(A)
申请公布日期
1994.04.26
申请号
US19910657692
申请日期
1991.02.19
申请人
ROCKWELL INTERNATIONAL CORPORATION
发明人
YOUNGER, CHARLES R.;JOHNSTON, SHAWN L.;IRVINE, STUART J. C.;GERTNER, EDWARD R.;HESS, KENNETH L.
