Deposition chamber for deposition of particles on semiconductor wafers

摘要

A deposition chamber for forming a deposited layer on a wafer having a mixing chamber is disclosed having a wafer support device for supporting the wafers in the mixing chamber, a nozzle located above the wafer support device which can eject the gas/particle mixture into the mixing chamber toward the wafer, a gas outlet device at the bottom end of the chamber from the gas nozzle which allows the gas to exit the chamber and a deionizing device located above the wafer support device and below the nozzle to deionize the gas/particle mixture thereby encouraging uniform deposition of the particles on the wafer. This deposition chamber may also comprise an exhaust fan below the gas outlet device.