发明名称 |
Method of treating semiconductor substrate surface and method of manufacturing semiconductor device including such treating method |
摘要 |
A principal feature of the present invention is to clean a surface of a semiconductor substrate without providing a damaged layer to the surface thereof. A native oxide film formed on the surface of a silicon substrate is etched by plasma employing a gas containing fluorine. The surface of the semiconductor substrate is again subjected to plasma etching by employing a gas containing fluorine in order to remove a surface damaged layer and a fluorocarbon layer formed in the above step of plasma etching. The semiconductor substrate surface is irradiated with ultraviolet rays under a low pressure in order to dissociate and remove fluorine atoms chemically adsorbed to the semiconductor substrate surface upon the latter plasma etching.
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申请公布号 |
US5306671(A) |
申请公布日期 |
1994.04.26 |
申请号 |
US19910718674 |
申请日期 |
1991.06.21 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
OGAWA, TOSHIAKI;MORITA, HIROSHI;ISHIDA, TOMOAKI;KAWAI, KENJI;AKAZAWA, MORIAKI |
分类号 |
H01L21/302;H01L21/28;H01L21/304;H01L21/306;H01L21/3065;(IPC1-7):H01L21/00;H01L21/02 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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