发明名称 |
FRONT SURFACE EMITTING DIODE LASER |
摘要 |
A front-surface emitting, vertical cavity laser and its method of making in which a vertical laser cavity with Bragg reflectors(36,50,52) and an active layer(18), preferably formed by a quantum well, is formed on a substrate(48). Lateral current confinement is achieved by implanting a conductivity-reducing ion into the region(28) surrounding the quantum well. Electrical contact(44) to the upper side of the active layer is achieved by implanting a conductivity-increasing ion into the region(32) surrounding the cavity between the active layer(18) and the upper reflector(36). By such an electrical contact, the upper reflector(36) can advantageously be composed of dielectric layers(38,40). Light is then emitted through the upper reflector(36).
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申请公布号 |
CA2034987(C) |
申请公布日期 |
1994.04.26 |
申请号 |
CA19912034987 |
申请日期 |
1991.01.25 |
申请人 |
KWON, YOUNG-SE;BELL COMMUNICATIONS RESEARCH, INC. |
发明人 |
KWON, YOUNG-SE;YOO, HOI-JUN |
分类号 |
H01S5/00;H01S5/042;H01S5/183;H01S5/30;(IPC1-7):H01S3/025;H01S3/085 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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