Semiconductor device having field effect transistor using ferroelectric film as gate insulation film

摘要

A semiconductor device having a field effect transistor in which a silicon carbide layer and a ferroelectric film are stacked in this order on the surface of a silicon substrate and the ferroelectric film is used as a gate insulation film. A channel between a source and a drain is formed in the silicon carbide layer. A metal or oxygen contained in a ferroelectric material is difficult to diffuse in silicon carbide. Therefore, the silicon carbide layer is not eroded in the case of heat treatment after forming the ferroelectric film. Therefore, good FET characteristics is obtained.