发明名称 |
Method for manufacturing a solar cell from a substrate wafer |
摘要 |
A self-supporting layer of n-doped monocrystalline silicon is stripped from a substrate wafer of n-doped, monocrystalline silicon by electrochemical etching for manufacturing a solar cell. Holes are formed in the substrate wafer by electrochemical etching, particularly in a fluoride-containing, acidic electrolyte wherein the substrate wafer is connected as an anode. When a depth of the holes that essentially corresponds to the thickness of the self-supporting layer is reached, the process parameters of the etching are modified such that the self-supporting layer is stripped as a consequence of the holes growing together. The solar cell is manufactured from the self-supporting layer, and the method can be applied repeatedly on the same substrate wafer for stripping a plurality of self-supporting layers.
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申请公布号 |
US5306647(A) |
申请公布日期 |
1994.04.26 |
申请号 |
US19920998611 |
申请日期 |
1992.12.30 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
LEHMANN, VOLKER;STENGL, REINHARD;WENDT, HERMANN;HOENLEIN, WOLFGANG;WILLER, JOSEF |
分类号 |
C25F3/12;H01L21/3063;H01L27/142;H01L31/0352;H01L31/04;H01L31/18;(IPC1-7):H01L31/18 |
主分类号 |
C25F3/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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