| 摘要 |
A process for stripping photo-resists and an aqueous bath for use in the process are disclosed. The process is carried out at 40 to 100 C for about 0.1 to 10 minutes. The aqueous bath contains 1 to 10 weight percent N,N-dimethyl-bis(2-hydroxyethyl) quaternary ammonium hydroxide and preferably 0.5 to 10 weight percent of a metal complexing agent such as monoethanol amine, ethylene diamine, ethylene diamine tetraacetic, melamine, nitrillotriacetic acid, morpholine, acetonylacetone, and preferably from 0.1 to 5 weight percent ammonia. |
