| 摘要 |
PURPOSE:To obtain a thin film of impurity doped organopolysilane or silicon carbide at a high rate by adding an impurity to a thin film of organopolysilane formed by vapor-depositing organosilane as starting material on a substrate. CONSTITUTION:Organosilane having no arom. ring in the side chain as starting material is heated to 800-1,000 deg.C under <=10<-2>Torr reduced pressure and a thin film of organopolysilane is formed on a substrate by vapor deposition. This thin film and an impurity are sealed in a vessel and the impurity is added by vapor deposition. |
