METHOD FOR FORMING ELECTRODE OF SEMICONDUCTOR ELEMENT

摘要

PURPOSE:To provide a method by which the electrode of a semiconductor light emitting element can be formed so that the electrode can maintain high reliability for a long period. CONSTITUTION:In the title method in which an electrode is formed by successively depositing a contact film 11, barrier film 12, and Au film 10 on a semiconductor element constituted by forming a current blocking layer 2 having a current constricting window and made of a semiconductor and insulating film 1 with a current constricting window having a larger window area than the layer 2 does, the Au film 10 is formed after the contact film 11 and barrier film 12 are successively formed and the films 11 and 12 are subjected to heat treatment.