SELECTIVE GROWTH METHOD OF SEMICONDUCTOR CRYSTAL

摘要

PURPOSE:To grow a crystal selectively in the specific region of a substrate crystal without depending upon a complicate technique centering around lithography using a mask material as seen in a conventional device. CONSTITUTION:A specified region is irradiated with a charged particle beam 12 by using a substrate crystal 11 having a face azimuth inclined at a small angle from a crystal plane and the crystal is grown in the crystal growth of a semiconductor, thus promoting crystal growth 17 in the region irradiated with a charged particle beam as compared with a section not irradiated with the charged particle beam. Consequently, the crystal can be grown selectively in the specific region of the substrate crystal even when a complicate technique centering around lithography employing a mask material as seen in a conventional device is not used. A crystal having at least one or more of constituent elements different from the substrate crystal is grown by the growth method, thus inhibiting the growth of the section not irradiated with the charged particle beam of the substrate crystal, then selectively growing the crystal only in the region irradiated with charged beams.