| 摘要 |
PURPOSE:To lower the reflectivity on the surface of a substrate by directly subjecting a titanium nitride film deposited on a substrate in order to lower the reflectivity to an oxygen plasma treatment by using a device, such as asher to be used for a resist ashing treatment. CONSTITUTION:The titanium nitride film deposited on the substrate is subjected to the oxygen plasma treatment, by which the surface of the titanium nitride film is oxidized. The surface reflectivity is further lowered by an increase in interference effect. The probable reason thereof lies in that the TiOxNy is formed on the front layer of the titanium nitride film (TiN) deposited on the substrate. This TiOxNy serves an effective antireflection film. After the metallic film is formed by sputtering on the semiconductor substrate, the titanium nitride film having 1000Angstrom film thickness is formed by sputtering in such a manner that the reflectivity is confined within a specified range. The results obtd. by subjecting this evaluating substrate to the oxygen plasma treatment under prescribed conditions are then shown in Fig. The reflectivity is lowered from 21.6% down to 16.6% according to the results of such experiment. |
