MANUFACTURE OF COMPOUND SEMICONDUCTOR

摘要

PURPOSE:To prevent wafer cracking due to an internal stress at the time of etching. CONSTITUTION:In a manufacture of a compound semiconductor wherein after a GaAlAs layer is liquid-phase epitaxially grown on a GaAs substrate to form a wafer 3, the GaAs substrate of the wafer 3 is removed by etching, the wafer 3 is fixed to a film 2 which deforms according to warpage of the wafer 3, an edge 2a of the film 2 outside the wafer 3 is fixed to a resin frame 1 to flexibly support the wafer 3 by the resin frame 1, and then the GaAs substrate is etched out.