MANUFACTURE OF INSULATING FILM AND THIN FILM TRANSISTOR ELEMENT PROVIDED THEREWITH

摘要

PURPOSE:To obtain an anodized film dense and with no film defect when a substrate of a large area is anodized. CONSTITUTION:An Al:Si film is deposited on a glass substrate 1, and a gate electrode 2 is formed as thick as 3000Angstrom through photolithography and etching (figure a). The surface of the electrode 2 is subjected to a plasma treatment in an oxygen atmosphere at a temperature of 400 deg.C for 5 minutes to be modified (figure b). An Al2O3 film 4 is formed as thick as 2000Angstrom through an anodizing process (figure c). A second SiNx gate insulating film 5, an a-Si semiconductor layer 6, and a channel stopper layer SiNx film 7 are consecutively formed as thick as 2000Angstrom , 500Angstrom , and 1000Angstrom respectively through a P-CVD method (figure d). The channel stopper layer SiNx film 7 is selectively etched to serve as a channel stopper layer (figure e). Al is deposited through a sputtering process and turned into a source electrode 8 by photolithography and etching (figure f).