| 摘要 |
PURPOSE:To reduce a flare without a danger that an edge short circuit is caused in a solid-state image sensing device wherein an electrode for a solid-state image sensing element is taken out via a wire. CONSTITUTION:Each corner part at a solid-state image sensing element 1 is chamfered 6 in such a way that each rise height (a) of each wire 5 is set at 100mum or lower and that an interval (b) in the up-and-down direction between a wire arch and a chip edge at the solid-state image sensing element is set at 50mum or higher. |
