| 摘要 |
PURPOSE:To eliminate the roundabout routing and branching of a bit line for realizing the acceleration and high density formation by a method wherein a bit line of a DRAM is formed in a stripe shape so as to form channel regions 11 in shallow aperture parts on the bit line. CONSTITUTION:Gate oxide films 10 deposited in aperture parts on source.drain 4 are etched back. Next, after selectively growing channel regions 11 made of P-type silicon, drain.source 12 is formed. Next, the second polysilicon 13 to be a charge accumulation electrode (storage node) is deposited to be patterned. Finally, a capacitor insulating film 14 and the third polysilicon 15 to be an opposite electrode (cell plate) of a capacitor are deposited. |
