| 摘要 |
<p>PURPOSE:To provide the novel antireflection film which can sufficiently decrease standing wave effects and has good solubility in water and developer without generating intermixing and the resist patterns having excellent resolution, developability, pattern shapes, etc., by incorporating specific copolymers or the salts thereof into these film and patterns. CONSTITUTION:The antireflection film contains the copolymer having at least one kind of the repeating units expressed by formula I and/or at least one kind of the repeating units expressed by formula II and at least one kind of the repeating units expressed by formula III or the salts thereof. In the formulas I, II, R<1> to R<4> respectively denote a hydrogen atom or org. group; A denotes a carboxyl group or sulfo group. In the formula II, R<5> denotes a hydrogen atom or org. group; Rf denotes a fluoroalkyl group; B denotes an alkylene group or fluoroalkylene group. After the antireflection film is previously formed on the resist film, the resist film is exposed and developed at the time of forming the resist patterns.</p> |
